Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
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چکیده
منابع مشابه
Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires
III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon technology. Alloying of GaAs with nitrogen can further enhance performance and extend device function...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep11653